BF422G
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- Mfr.Part #
- BF422G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 250V 0.05A TO92
- Stock
- 4,729
- In Stock ：
- 4,729
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 60MHz
- Packaging :
- Bulk
- Transistor Type :
- NPN
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- AMPLIFIER
- Width :
- 6.35mm
- Lead Free :
- Lead Free
- Power Dissipation :
- 830mW
- Polarity/Channel Type :
- NPN
- Voltage - Rated DC :
- 250V
- Current Rating :
- 50mA
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 25mA 20V
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- BOTTOM
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Weight :
- 4.535924g
- Base Part Number :
- BF422
- Collector Emitter Saturation Voltage :
- 500mV
- Collector Emitter Breakdown Voltage :
- 250V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Max Collector Current :
- 50mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Mount :
- Through Hole
- hFE Min :
- 50
- RoHS Status :
- RoHS Compliant
- Transition Frequency :
- 60MHz
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Height :
- 6.35mm
- Contact Plating :
- Copper, Silver, Tin
- Max Power Dissipation :
- 830mW
- Length :
- 6.35mm
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 60MHz
- Published :
- 2005
- Collector Base Voltage (VCBO) :
- 250V
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 250V
- Datasheets
- BF422G
BF422G Documents
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BF422G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 25mA 20V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 50mA.A transition frequency of 60MHz is present in the part.Collector current can be as low as 50mA volts at its maximum.
BF422G Features
the DC current gain for this device is 50 @ 25mA 20V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 60MHz
BF422G Applications
There are a lot of ON Semiconductor
BF422G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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