BF422G
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- Mfr.Part #
- BF422G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 250V 0.05A TO92
- Stock
- 4,729
- In Stock ：
- 4,729
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 60MHz
- Power Dissipation :
- 830mW
- Collector Emitter Saturation Voltage :
- 500mV
- Max Power Dissipation :
- 830mW
- Transistor Application :
- AMPLIFIER
- Voltage - Rated DC :
- 250V
- Element Configuration :
- Single
- Contact Plating :
- Copper, Silver, Tin
- Frequency :
- 60MHz
- Number of Elements :
- 1
- Packaging :
- Bulk
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 25mA 20V
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 250V
- Width :
- 6.35mm
- Base Part Number :
- BF422
- Weight :
- 4.535924g
- JESD-609 Code :
- e1
- Published :
- 2005
- Current Rating :
- 50mA
- Polarity/Channel Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Qualification Status :
- Not Qualified
- Pbfree Code :
- yes
- hFE Min :
- 50
- Number of Terminations :
- 3
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Mounting Type :
- Through Hole
- Length :
- 6.35mm
- ECCN Code :
- EAR99
- Max Collector Current :
- 50mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- RoHS Compliant
- Collector Emitter Breakdown Voltage :
- 250V
- Terminal Position :
- BOTTOM
- Gain Bandwidth Product :
- 60MHz
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 250V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Height :
- 6.35mm
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Datasheets
- BF422G
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BF422G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 25mA 20V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 50mA.A transition frequency of 60MHz is present in the part.Collector current can be as low as 50mA volts at its maximum.
BF422G Features
the DC current gain for this device is 50 @ 25mA 20V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 60MHz
BF422G Applications
There are a lot of ON Semiconductor
BF422G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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