BDV65BG
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- Mfr.Part #
- BDV65BG
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 10A TO247-3
- Stock
- 4
- In Stock ：
- 4
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 125W
- Transistor Application :
- AMPLIFIER
- Surface Mount :
- No
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 100V
- Collector Emitter Saturation Voltage :
- 2V
- Max Collector Current :
- 10A
- Power Dissipation :
- 125W
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 100V
- Polarity :
- NPN
- REACH SVHC :
- No SVHC
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 4V
- Transistor Type :
- NPN - Darlington
- Current - Collector Cutoff (Max) :
- 1mA
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -65°C~150°C TJ
- hFE Min :
- 1000
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 20mA, 5A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Element Configuration :
- Single
- Current Rating :
- 10A
- Voltage - Rated DC :
- 100V
- Pbfree Code :
- yes
- Published :
- 2002
- ECCN Code :
- EAR99
- Package / Case :
- TO-247-3
- Factory Lead Time :
- 2 Weeks
- Pin Count :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- Datasheets
- BDV65BG
NPN - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole
BDV65BG Overview
This device has a DC current gain of 1000 @ 5A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 2V @ 20mA, 5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 10A volts is possible.
BDV65BG Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
BDV65BG Applications
There are a lot of ON Semiconductor
BDV65BG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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