BDV65

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Tin/Lead (Sn/Pb)

Qualification Status :

Not Qualified

Frequency - Transition :

60MHz

Current - Collector (Ic) (Max) :

12A

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 5A 4V

Pbfree Code :

No

Transistor Application :

AMPLIFIER

Voltage - Collector Emitter Breakdown (Max) :

60V

Case Connection :

COLLECTOR

Package / Case :

TO-218-3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Bulk

Power Dissipation-Max (Abs) :

125W

Power - Max :

125W

Surface Mount :

No

HTS Code :

8541.29.00.75

Operating Temperature (Max) :

150°C

Transistor Element Material :

SILICON

Number of Elements :

1

Configuration :

Darlington

JESD-30 Code :

R-PSFM-T3

ECCN Code :

EAR99

Mounting Type :

Through Hole

Transistor Type :

NPN

Transition Frequency :

60MHz

Terminal Position :

Single

JESD-609 Code :

e0

RoHS Status :

Non-RoHS Compliant

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

not_compliant

Polarity/Channel Type :

NPN