BDV65-S

Manufacturer :

Bourns, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

-65°C~150°C TJ

Min Operating Temperature :

-65°C

Current - Collector Cutoff (Max) :

2mA

Max Collector Current :

12A

Polarity :

NPN

Supplier Device Package :

SOT-93

Collector Emitter Saturation Voltage :

2V

Packaging :

Tube

Transistor Type :

NPN - Darlington

Collector Emitter Voltage (VCEO) :

60V

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Current - Collector (Ic) (Max) :

12A

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Breakdown Voltage :

60V

Voltage - Collector Emitter Breakdown (Max) :

60V

Max Power Dissipation :

3.5W

Base Part Number :

BDV65

RoHS Status :

ROHS3 Compliant

Power - Max :

3.5W

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 5A 4V

Number of Elements :

1

Max Operating Temperature :

150°C

Collector Base Voltage (VCBO) :

60V

hFE Min :

1000

Number of Pins :

3

Vce Saturation (Max) @ Ib, Ic :

2V @ 20mA, 5A

Package / Case :

TO-218-3

Published :

1993

Mounting Type :

Through Hole