BDV64B
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- Mfr.Part #
- BDV64B
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 12A TO218
- Stock
- 3,027
- In Stock ：
- 3,027
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Surface Mount :
- No
- Power Dissipation :
- 125W
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Number of Terminations :
- 3
- Pin Count :
- 3
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Voltage - Rated DC :
- -100V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 4V
- Collector Emitter Voltage (VCEO) :
- 100V
- Transistor Application :
- AMPLIFIER
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 125W
- Max Collector Current :
- 10A
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Transistor Type :
- PNP - Darlington
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Published :
- 2002
- Emitter Base Voltage (VEBO) :
- 5V
- Pbfree Code :
- yes
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 1mA
- Collector Emitter Saturation Voltage :
- 2V
- Operating Temperature :
- -65°C~150°C TJ
- Factory Lead Time :
- 2 Weeks
- Mounting Type :
- Through Hole
- Case Connection :
- COLLECTOR
- Polarity :
- PNP
- Package / Case :
- TO-247-3
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 20mA, 5A
- hFE Min :
- 1000
- Collector Base Voltage (VCBO) :
- 100V
- Current Rating :
- -10A
- Transition Frequency :
- 0.1MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 100V
- Datasheets
- BDV64B
PNP - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole
BDV64BG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 5A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 20mA, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 0.1MHz.During maximum operation, collector current can be as low as 10A volts.
BDV64BG Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 0.1MHz
BDV64BG Applications
There are a lot of ON Semiconductor
BDV64BG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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