BDV64B
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- Mfr.Part #
- BDV64B
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 10A SOT93
- Stock
- 3,027
- In Stock ：
- 3,027
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 125W
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Polarity :
- PNP
- Max Power Dissipation :
- 125W
- Mounting Type :
- Through Hole
- Published :
- 2002
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Packaging :
- Tube
- Transistor Type :
- PNP - Darlington
- Package / Case :
- TO-247-3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Voltage - Rated DC :
- -100V
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 1mA
- Number of Elements :
- 1
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 4V
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 100V
- Factory Lead Time :
- 2 Weeks
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 10A
- hFE Min :
- 1000
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 2V
- Case Connection :
- COLLECTOR
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 100V
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 100V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Transition Frequency :
- 0.1MHz
- Surface Mount :
- No
- Operating Temperature :
- -65°C~150°C TJ
- Current Rating :
- -10A
- Transistor Application :
- AMPLIFIER
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 20mA, 5A
- Datasheets
- BDV64B
PNP - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole
BDV64BG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 5A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 20mA, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 0.1MHz.During maximum operation, collector current can be as low as 10A volts.
BDV64BG Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 0.1MHz
BDV64BG Applications
There are a lot of ON Semiconductor
BDV64BG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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