BDV64BG
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- Mfr.Part #
- BDV64BG
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 10A TO247-3
- Stock
- 101
- In Stock ：
- 101
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- 2V
- Number of Terminations :
- 3
- hFE Min :
- 1000
- Surface Mount :
- No
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Transistor Application :
- AMPLIFIER
- Max Power Dissipation :
- 125W
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 2 Weeks
- Pin Count :
- 3
- Packaging :
- Tube
- Number of Elements :
- 1
- Power Dissipation :
- 125W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 4V
- Transistor Element Material :
- SILICON
- Published :
- 2002
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 20mA, 5A
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- Polarity :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 100V
- Package / Case :
- TO-247-3
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 1mA
- Max Collector Current :
- 10A
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Transition Frequency :
- 0.1MHz
- Current Rating :
- -10A
- Collector Emitter Breakdown Voltage :
- 100V
- Operating Temperature :
- -65°C~150°C TJ
- Voltage - Rated DC :
- -100V
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- PNP - Darlington
- JESD-609 Code :
- e3
- Datasheets
- BDV64BG
PNP - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole
BDV64BG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 5A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 20mA, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 0.1MHz.During maximum operation, collector current can be as low as 10A volts.
BDV64BG Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 0.1MHz
BDV64BG Applications
There are a lot of ON Semiconductor
BDV64BG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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