BDV65B
- Mfr.Part #
- BDV65B
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 10A SOT93
- Stock
- 3,842
- In Stock :
- 3,842
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 2 Weeks
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 100V
- Power Dissipation :
- 125W
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 2V
- Collector Emitter Voltage (VCEO) :
- 100V
- Pin Count :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- Max Collector Current :
- 10A
- JESD-609 Code :
- e3
- Operating Temperature :
- -65°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 1mA
- Voltage - Rated DC :
- 100V
- Collector Emitter Breakdown Voltage :
- 100V
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- Surface Mount :
- No
- Polarity :
- NPN
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Current Rating :
- 10A
- Peak Reflow Temperature (Cel) :
- 260
- hFE Min :
- 1000
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 20mA, 5A
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 4V
- Contact Plating :
- Tin
- Transistor Application :
- AMPLIFIER
- Transistor Element Material :
- SILICON
- Published :
- 2002
- Number of Pins :
- 3
- Transistor Type :
- NPN - Darlington
- Max Power Dissipation :
- 125W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- TO-247-3
- Packaging :
- Tube
- Datasheets
- BDV65B

NPN - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole
BDV65BG Overview
This device has a DC current gain of 1000 @ 5A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 2V @ 20mA, 5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 10A volts is possible.
BDV65BG Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
BDV65BG Applications
There are a lot of ON Semiconductor
BDV65BG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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