BDV65B

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Mfr.Part #
BDV65B
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
TRANS NPN DARL 100V 10A SOT93
Stock
3,842
In Stock :
3,842

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
REACH SVHC :
No SVHC
Factory Lead Time :
2 Weeks
Mounting Type :
Through Hole
Element Configuration :
Single
Collector Base Voltage (VCBO) :
100V
Power Dissipation :
125W
Number of Terminations :
3
Lead Free :
Lead Free
Collector Emitter Saturation Voltage :
2V
Collector Emitter Voltage (VCEO) :
100V
Pin Count :
3
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Emitter Base Voltage (VEBO) :
5V
Radiation Hardening :
No
Max Collector Current :
10A
JESD-609 Code :
e3
Operating Temperature :
-65°C~150°C TJ
Current - Collector Cutoff (Max) :
1mA
Voltage - Rated DC :
100V
Collector Emitter Breakdown Voltage :
100V
Number of Elements :
1
Case Connection :
COLLECTOR
Surface Mount :
No
Polarity :
NPN
ECCN Code :
EAR99
Pbfree Code :
yes
Current Rating :
10A
Peak Reflow Temperature (Cel) :
260
hFE Min :
1000
Vce Saturation (Max) @ Ib, Ic :
2V @ 20mA, 5A
RoHS Status :
ROHS3 Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 5A 4V
Contact Plating :
Tin
Transistor Application :
AMPLIFIER
Transistor Element Material :
SILICON
Published :
2002
Number of Pins :
3
Transistor Type :
NPN - Darlington
Max Power Dissipation :
125W
Time@Peak Reflow Temperature-Max (s) :
40
Package / Case :
TO-247-3
Packaging :
Tube
Datasheets
BDV65B
Introducing Transistors - Bipolar (BJT) - Single onsemi BDV65B from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-65°C~150°C TJ, Number of Pins:3, Package / Case:TO-247-3, BDV65B pinout, BDV65B datasheet PDF, BDV65B amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BDV65B ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BDV65B


NPN - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole

BDV65BG Overview


This device has a DC current gain of 1000 @ 5A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 2V @ 20mA, 5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 10A volts is possible.

BDV65BG Features


the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is 10A


BDV65BG Applications


There are a lot of ON Semiconductor
BDV65BG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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