BDV65A-S

Manufacturer :

Bourns, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

2V

Emitter Base Voltage (VEBO) :

5V

Transistor Type :

NPN - Darlington

Number of Pins :

3

Mounting Type :

Through Hole

Vce Saturation (Max) @ Ib, Ic :

2V @ 20mA, 5A

Published :

1993

Mount :

Through Hole

Power - Max :

3.5W

Voltage - Collector Emitter Breakdown (Max) :

80V

hFE Min :

1000

Operating Temperature :

-65°C~150°C TJ

Max Operating Temperature :

150°C

Polarity :

NPN

Number of Elements :

1

Base Part Number :

BDV65

Current - Collector Cutoff (Max) :

2mA

Package / Case :

TO-218-3

Collector Emitter Voltage (VCEO) :

80V

Max Power Dissipation :

3.5W

Element Configuration :

Single

Supplier Device Package :

SOT-93

Min Operating Temperature :

-65°C

Max Collector Current :

12A

Collector Emitter Breakdown Voltage :

80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

80V

Current - Collector (Ic) (Max) :

12A

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 5A 4V