BDV64B-S

Manufacturer :

Bourns, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Length :

15.2mm

Emitter Base Voltage (VEBO) :

5V

Max Operating Temperature :

150°C

RoHS Status :

ROHS3 Compliant

hFE Min :

1000

Supplier Device Package :

SOT-93

Package / Case :

TO-218-3

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 5A 4V

Max Power Dissipation :

3.5W

Collector Emitter Voltage (VCEO) :

100V

Transistor Type :

PNP - Darlington

Power - Max :

3.5W

Polarity :

PNP

Width :

4.9mm

Current - Collector (Ic) (Max) :

12A

Operating Temperature :

-65°C~150°C TJ

Collector Emitter Saturation Voltage :

2V

Base Part Number :

BDV64

Max Collector Current :

12A

Number of Elements :

1

Packaging :

Tube

Min Operating Temperature :

-65°C

Collector Base Voltage (VCBO) :

100V

Published :

1993

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Number of Pins :

3

Height :

12.2mm

Element Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

2V @ 20mA, 5A

Mounting Type :

Through Hole

Current - Collector Cutoff (Max) :

2mA

Collector Emitter Breakdown Voltage :

100V

Voltage - Collector Emitter Breakdown (Max) :

100V