BDV65B

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Mfr.Part #
BDV65B
Manufacturer
Central Semiconductor
Package / Case
TO-247-3
Datasheet
Download
Description
TRANS NPN 100V 12A TO218
Stock
3,842
In Stock :
3,842

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Manufacturer :
Central Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector Cutoff (Max) :
1mA
Transistor Element Material :
SILICON
Max Collector Current :
10A
Number of Elements :
1
REACH SVHC :
No SVHC
Collector Emitter Saturation Voltage :
2V
Peak Reflow Temperature (Cel) :
260
Package / Case :
TO-247-3
Vce Saturation (Max) @ Ib, Ic :
2V @ 20mA, 5A
Pin Count :
3
Operating Temperature :
-65°C~150°C TJ
Factory Lead Time :
2 Weeks
Lead Free :
Lead Free
Contact Plating :
Tin
Surface Mount :
No
Collector Emitter Breakdown Voltage :
100V
Current Rating :
10A
Polarity :
NPN
Number of Pins :
3
Collector Base Voltage (VCBO) :
100V
Emitter Base Voltage (VEBO) :
5V
Pbfree Code :
yes
Voltage - Rated DC :
100V
Transistor Application :
AMPLIFIER
Collector Emitter Voltage (VCEO) :
100V
Time@Peak Reflow Temperature-Max (s) :
40
Published :
2002
Power Dissipation :
125W
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
ECCN Code :
EAR99
Packaging :
Tube
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 5A 4V
Max Power Dissipation :
125W
Number of Terminations :
3
Mounting Type :
Through Hole
hFE Min :
1000
Transistor Type :
NPN - Darlington
Radiation Hardening :
No
Element Configuration :
Single
Case Connection :
COLLECTOR
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
BDV65B
Introducing Transistors - Bipolar (BJT) - Single Central Semiconductor BDV65B from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Operating Temperature:-65°C~150°C TJ, Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, BDV65B pinout, BDV65B datasheet PDF, BDV65B amp .Beyond Transistors - Bipolar (BJT) - Single Central Semiconductor BDV65B ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole

BDV65BG Overview


This device has a DC current gain of 1000 @ 5A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 2V @ 20mA, 5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 10A volts is possible.

BDV65BG Features


the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is 10A


BDV65BG Applications


There are a lot of ON Semiconductor
BDV65BG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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