BD179G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

ECCN Code :

EAR99

Element Configuration :

Single

Number of Pins :

3

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

40

Frequency :

3MHz

hFE Min :

63

DC Current Gain (hFE) (Min) @ Ic, Vce :

63 @ 150mA 2V

Collector Emitter Breakdown Voltage :

80V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Emitter Base Voltage (VEBO) :

5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

BD179

Factory Lead Time :

2 Weeks

Collector Emitter Saturation Voltage :

800mV

Width :

6.35mm

Radiation Hardening :

No

Surface Mount :

No

Weight :

4.535924g

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

800mV @ 100mA, 1A

Max Power Dissipation :

30W

Packaging :

Bulk

Peak Reflow Temperature (Cel) :

260

Transistor Type :

NPN

Collector Base Voltage (VCBO) :

80V

Transition Frequency :

3MHz

Pin Count :

3

Published :

2006

Max Collector Current :

3A

Operating Temperature :

-65°C~150°C TJ

Current Rating :

3A

Gain Bandwidth Product :

3MHz

JESD-609 Code :

e3

Transistor Application :

AMPLIFIER

Number of Terminations :

3

Polarity/Channel Type :

NPN

Power Dissipation :

30W

REACH SVHC :

No SVHC

Length :

31.75mm

Mounting Type :

Through Hole

Contact Plating :

Tin

Current - Collector Cutoff (Max) :

100μA ICBO

Transistor Element Material :

SILICON

Height :

6.35mm

Collector Emitter Voltage (VCEO) :

80V

Voltage - Rated DC :

80V

Package / Case :

TO-225AA, TO-126-3

Pbfree Code :

yes