BD179G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Type :

NPN

Transistor Element Material :

SILICON

Surface Mount :

No

Pbfree Code :

yes

Gain Bandwidth Product :

3MHz

hFE Min :

63

Width :

6.35mm

Emitter Base Voltage (VEBO) :

5V

Height :

6.35mm

Collector Emitter Voltage (VCEO) :

80V

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

30W

Vce Saturation (Max) @ Ib, Ic :

800mV @ 100mA, 1A

Collector Emitter Breakdown Voltage :

80V

Transition Frequency :

3MHz

Pin Count :

3

Operating Temperature :

-65°C~150°C TJ

Published :

2006

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Current Rating :

3A

Collector Base Voltage (VCBO) :

80V

Mounting Type :

Through Hole

Max Power Dissipation :

30W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

80V

JESD-609 Code :

e3

Weight :

4.535924g

Number of Pins :

3

REACH SVHC :

No SVHC

Transistor Application :

AMPLIFIER

Length :

31.75mm

Radiation Hardening :

No

Packaging :

Bulk

Frequency :

3MHz

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

63 @ 150mA 2V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Polarity/Channel Type :

NPN

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Max Collector Current :

3A

Collector Emitter Saturation Voltage :

800mV

Factory Lead Time :

2 Weeks

Package / Case :

TO-225AA, TO-126-3

Element Configuration :

Single

Current - Collector Cutoff (Max) :

100μA ICBO

Number of Terminations :

3

Contact Plating :

Tin

Base Part Number :

BD179