BD17510STU
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- Mfr.Part #
- BD17510STU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 3A TO126-3
- Stock
- 28,707
- In Stock ：
- 28,707
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Transition Frequency :
- 3MHz
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 45V
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Current Rating :
- 3A
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 3A
- Transistor Element Material :
- SILICON
- Frequency :
- 3MHz
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 45V
- Gain Bandwidth Product :
- 3MHz
- Voltage - Rated DC :
- 45V
- Factory Lead Time :
- 2 Weeks
- Weight :
- 761mg
- Transistor Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-225AA, TO-126-3
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 30W
- Max Power Dissipation :
- 30W
- Published :
- 2000
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 100mA, 1A
- JESD-30 Code :
- R-PSFM-T3
- hFE Min :
- 40
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Mount :
- Through Hole
- Packaging :
- Tube
- Collector Emitter Breakdown Voltage :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Collector Emitter Saturation Voltage :
- 800mV
- Contact Plating :
- Tin
- Datasheets
- BD17510STU
BD17510STU Documents
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD17510STU Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 800mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 800mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).3MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.
BD17510STU Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
BD17510STU Applications
There are a lot of ON Semiconductor
BD17510STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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