BD17510STU
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- Mfr.Part #
- BD17510STU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 3A TO126-3
- Stock
- 28,707
- In Stock ：
- 28,707
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 3MHz
- Collector Emitter Breakdown Voltage :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Published :
- 2000
- Power Dissipation :
- 30W
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 100mA, 1A
- Frequency :
- 3MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Qualification Status :
- Not Qualified
- Voltage - Rated DC :
- 45V
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Transition Frequency :
- 3MHz
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 30W
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 45V
- Collector Emitter Saturation Voltage :
- 800mV
- Package / Case :
- TO-225AA, TO-126-3
- Max Collector Current :
- 3A
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- JESD-30 Code :
- R-PSFM-T3
- hFE Min :
- 40
- Transistor Type :
- NPN
- Mount :
- Through Hole
- Contact Plating :
- Tin
- Current Rating :
- 3A
- Collector Base Voltage (VCBO) :
- 45V
- Weight :
- 761mg
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 2 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Datasheets
- BD17510STU
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD17510STU Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 800mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 800mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).3MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.
BD17510STU Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
BD17510STU Applications
There are a lot of ON Semiconductor
BD17510STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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