BD17810STU
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- Mfr.Part #
- BD17810STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 3A TO126-3
- Stock
- 7,650
- In Stock ：
- 7,650
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Current - Collector (Ic) (Max) :
- 3A
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Frequency - Transition :
- 3MHz
- Package / Case :
- TO-225AA, TO-126-3
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Power - Max :
- 30W
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 100mA, 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Packaging :
- Tube
- Datasheets
- BD17810STU
PNP 150°C TJ 100μA ICBO TO-225AA, TO-126-3 Tube Through Hole
BD17810STU Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 100mA, 1A.There is a 60V maximal voltage in the device due to collector-emitter breakdown.
BD17810STU Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 800mV @ 100mA, 1A
BD17810STU Applications
There are a lot of ON Semiconductor
BD17810STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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