BD17610STU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Published :

2002

Number of Pins :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

63 @ 150mA 2V

Vce Saturation (Max) @ Ib, Ic :

800mV @ 100mA, 1A

Polarity/Channel Type :

PNP

Current Rating :

-3A

Collector Emitter Saturation Voltage :

-800mV

Lead Free :

Lead Free

Length :

8mm

Gain Bandwidth Product :

3MHz

Max Collector Current :

3A

Contact Plating :

Tin

Collector Emitter Breakdown Voltage :

45V

Radiation Hardening :

No

hFE Min :

40

Height :

11mm

Package / Case :

TO-225AA, TO-126-3

Element Configuration :

Single

Mounting Type :

Through Hole

Packaging :

Tube

Power Dissipation :

30W

Current - Collector Cutoff (Max) :

100μA ICBO

Number of Elements :

1

Operating Temperature :

150°C TJ

Max Power Dissipation :

30W

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Voltage - Rated DC :

-45V

Width :

3.25mm

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Collector Emitter Voltage (VCEO) :

45V

Mount :

Through Hole

Pbfree Code :

yes

Transition Frequency :

3MHz

Emitter Base Voltage (VEBO) :

-5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Transistor Application :

SWITCHING

Factory Lead Time :

36 Weeks

Weight :

761mg

Frequency :

3MHz

Transistor Type :

PNP

JESD-609 Code :

e3

ECCN Code :

EAR99

Collector Base Voltage (VCBO) :

-45V