BD17610STU
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- Mfr.Part #
- BD17610STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 3A TO126-3
- Stock
- 24,444
- In Stock ：
- 24,444
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 45V
- RoHS Status :
- RoHS Compliant
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Published :
- 2002
- Pbfree Code :
- yes
- Height :
- 11mm
- Frequency :
- 3MHz
- Transistor Type :
- PNP
- Transition Frequency :
- 3MHz
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Max Collector Current :
- 3A
- ECCN Code :
- EAR99
- Factory Lead Time :
- 36 Weeks
- Emitter Base Voltage (VEBO) :
- -5V
- Transistor Element Material :
- SILICON
- Width :
- 3.25mm
- Number of Elements :
- 1
- Mount :
- Through Hole
- hFE Min :
- 40
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Power Dissipation :
- 30W
- Max Power Dissipation :
- 30W
- Gain Bandwidth Product :
- 3MHz
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- -45V
- Collector Base Voltage (VCBO) :
- -45V
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Weight :
- 761mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 8mm
- Current Rating :
- -3A
- Package / Case :
- TO-225AA, TO-126-3
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 100mA, 1A
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 45V
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- PNP
- Collector Emitter Saturation Voltage :
- -800mV
- Number of Pins :
- 3
- Packaging :
- Tube
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Operating Temperature :
- 150°C TJ
- Datasheets
- BD17610STU
BD17610STU Documents
PNP 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
BD17610STU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 63 @ 150mA 2V DC current gain.As it features a collector emitter saturation voltage of -800mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 3A volts.
BD17610STU Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of -800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 3MHz
BD17610STU Applications
There are a lot of ON Semiconductor
BD17610STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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