BD179

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

Contact Plating :

Tin

Collector Emitter Saturation Voltage :

800mV

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

5V

DC Current Gain (hFE) (Min) @ Ic, Vce :

63 @ 150mA 2V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Height :

6.35mm

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

2 Weeks

Collector Base Voltage (VCBO) :

80V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Radiation Hardening :

No

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

80V

Width :

6.35mm

Frequency :

3MHz

Current Rating :

3A

Lead Free :

Lead Free

Power Dissipation :

30W

Max Power Dissipation :

30W

Surface Mount :

No

Current - Collector Cutoff (Max) :

100μA ICBO

Transistor Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

31.75mm

Number of Elements :

1

Number of Terminations :

3

Base Part Number :

BD179

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2006

Weight :

4.535924g

Voltage - Rated DC :

80V

Transistor Application :

AMPLIFIER

Gain Bandwidth Product :

3MHz

Vce Saturation (Max) @ Ib, Ic :

800mV @ 100mA, 1A

Mounting Type :

Through Hole

REACH SVHC :

No SVHC

Transition Frequency :

3MHz

Package / Case :

TO-225AA, TO-126-3

Polarity/Channel Type :

NPN

Packaging :

Bulk

Number of Pins :

3

Max Collector Current :

3A

Pbfree Code :

yes

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-65°C~150°C TJ

Collector Emitter Voltage (VCEO) :

80V

hFE Min :

63