BD179
- Mfr.Part #
- BD179
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 3A SOT32
- Stock
- 28,620
- In Stock :
- 28,620
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 3A
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 80V
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Transition Frequency :
- 3MHz
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- Package / Case :
- TO-225AA, TO-126-3
- Transistor Application :
- AMPLIFIER
- Width :
- 6.35mm
- Polarity/Channel Type :
- NPN
- Published :
- 2006
- Height :
- 6.35mm
- Contact Plating :
- Tin
- Frequency :
- 3MHz
- Collector Base Voltage (VCBO) :
- 80V
- REACH SVHC :
- No SVHC
- Packaging :
- Bulk
- Base Part Number :
- BD179
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 100mA, 1A
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Operating Temperature :
- -65°C~150°C TJ
- Power Dissipation :
- 30W
- Gain Bandwidth Product :
- 3MHz
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 5V
- Weight :
- 4.535924g
- Length :
- 31.75mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Surface Mount :
- No
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 30W
- Voltage - Rated DC :
- 80V
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 800mV
- Max Collector Current :
- 3A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Factory Lead Time :
- 2 Weeks
- hFE Min :
- 63
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 80V
- Element Configuration :
- Single
- Datasheets
- BD179
BD179 Documents

NPN -65°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD179G Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 800mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 800mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).3MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.
BD179G Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
BD179G Applications
There are a lot of ON Semiconductor
BD179G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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