BD179
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- Mfr.Part #
- BD179
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 3A SOT32
- Stock
- 28,620
- In Stock ：
- 28,620
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 3MHz
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 80V
- Max Power Dissipation :
- 30W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Transistor Type :
- NPN
- Transistor Application :
- AMPLIFIER
- Frequency :
- 3MHz
- Current Rating :
- 3A
- Polarity/Channel Type :
- NPN
- Height :
- 6.35mm
- REACH SVHC :
- No SVHC
- hFE Min :
- 63
- Collector Emitter Saturation Voltage :
- 800mV
- Surface Mount :
- No
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Operating Temperature :
- -65°C~150°C TJ
- Contact Plating :
- Tin
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Collector Emitter Voltage (VCEO) :
- 80V
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Transition Frequency :
- 3MHz
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 100mA, 1A
- Pin Count :
- 3
- Width :
- 6.35mm
- Package / Case :
- TO-225AA, TO-126-3
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 3A
- Factory Lead Time :
- 2 Weeks
- Weight :
- 4.535924g
- Collector Base Voltage (VCBO) :
- 80V
- Voltage - Rated DC :
- 80V
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Published :
- 2006
- Packaging :
- Bulk
- Power Dissipation :
- 30W
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- BD179
- Length :
- 31.75mm
- Datasheets
- BD179
BD179 Documents
NPN -65°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD179G Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 800mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 800mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).3MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.
BD179G Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
BD179G Applications
There are a lot of ON Semiconductor
BD179G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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