BD179

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Mfr.Part #
BD179
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 80V 3A TO126
Stock
28,482
In Stock :
28,482

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Pins :
3
Published :
2006
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Voltage (VCEO) :
80V
Pbfree Code :
yes
Lead Free :
Lead Free
Package / Case :
TO-225AA, TO-126-3
Max Power Dissipation :
30W
Emitter Base Voltage (VEBO) :
5V
Operating Temperature :
-65°C~150°C TJ
Vce Saturation (Max) @ Ib, Ic :
800mV @ 100mA, 1A
Transistor Application :
AMPLIFIER
Max Collector Current :
3A
Current - Collector Cutoff (Max) :
100μA ICBO
Height :
6.35mm
Width :
6.35mm
Transistor Type :
NPN
Mounting Type :
Through Hole
Peak Reflow Temperature (Cel) :
260
REACH SVHC :
No SVHC
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Collector Emitter Saturation Voltage :
800mV
Packaging :
Bulk
Pin Count :
3
Gain Bandwidth Product :
3MHz
Number of Elements :
1
DC Current Gain (hFE) (Min) @ Ic, Vce :
63 @ 150mA 2V
Power Dissipation :
30W
Number of Terminations :
3
Radiation Hardening :
No
Current Rating :
3A
Collector Base Voltage (VCBO) :
80V
Time@Peak Reflow Temperature-Max (s) :
40
Length :
31.75mm
JESD-609 Code :
e3
Element Configuration :
Single
Voltage - Rated DC :
80V
Transistor Element Material :
SILICON
hFE Min :
63
Contact Plating :
Tin
Transition Frequency :
3MHz
Collector Emitter Breakdown Voltage :
80V
Factory Lead Time :
2 Weeks
Frequency :
3MHz
Surface Mount :
No
ECCN Code :
EAR99
Weight :
4.535924g
Polarity/Channel Type :
NPN
RoHS Status :
ROHS3 Compliant
Base Part Number :
BD179
Datasheets
BD179
Introducing Transistors - Bipolar (BJT) - Single onsemi BD179 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-225AA, TO-126-3, Operating Temperature:-65°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Base Part Number:BD179, BD179 pinout, BD179 datasheet PDF, BD179 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD179 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD179


NPN -65°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole

BD179G Overview


In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 800mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 800mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).3MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.

BD179G Features


the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz


BD179G Applications


There are a lot of ON Semiconductor
BD179G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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