BD179

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Mfr.Part #
BD179
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 80V 3A TO126
Stock
28,482
In Stock :
28,482

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Application :
AMPLIFIER
Pin Count :
3
Radiation Hardening :
No
Collector Base Voltage (VCBO) :
80V
Surface Mount :
No
Peak Reflow Temperature (Cel) :
260
Power Dissipation :
30W
Current Rating :
3A
Base Part Number :
BD179
Width :
6.35mm
REACH SVHC :
No SVHC
Transistor Type :
NPN
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Published :
2006
Polarity/Channel Type :
NPN
Current - Collector Cutoff (Max) :
100μA ICBO
Pbfree Code :
yes
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Weight :
4.535924g
Length :
31.75mm
DC Current Gain (hFE) (Min) @ Ic, Vce :
63 @ 150mA 2V
Frequency :
3MHz
Gain Bandwidth Product :
3MHz
Transistor Element Material :
SILICON
Number of Pins :
3
Collector Emitter Breakdown Voltage :
80V
Vce Saturation (Max) @ Ib, Ic :
800mV @ 100mA, 1A
Transition Frequency :
3MHz
Operating Temperature :
-65°C~150°C TJ
Number of Terminations :
3
ECCN Code :
EAR99
hFE Min :
63
Element Configuration :
Single
Max Power Dissipation :
30W
Emitter Base Voltage (VEBO) :
5V
Packaging :
Bulk
Mounting Type :
Through Hole
Collector Emitter Voltage (VCEO) :
80V
Collector Emitter Saturation Voltage :
800mV
Voltage - Rated DC :
80V
Package / Case :
TO-225AA, TO-126-3
Max Collector Current :
3A
Height :
6.35mm
Time@Peak Reflow Temperature-Max (s) :
40
Number of Elements :
1
JESD-609 Code :
e3
Contact Plating :
Tin
Factory Lead Time :
2 Weeks
Introducing Transistors - Bipolar (BJT) - Single onsemi BD179 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BD179, Number of Pins:3, Operating Temperature:-65°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-225AA, TO-126-3, BD179 pinout, BD179 datasheet PDF, BD179 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD179 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD179


NPN -65°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole

BD179G Overview


In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 800mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 800mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).3MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.

BD179G Features


the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz


BD179G Applications


There are a lot of ON Semiconductor
BD179G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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