BD17516STU
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- Mfr.Part #
- BD17516STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 3A TO126-3
- Stock
- 4,925
- In Stock ：
- 4,925
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 45V
- hFE Min :
- 40
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Breakdown Voltage :
- 80V
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 3MHz
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 800mV
- Published :
- 2000
- Collector Emitter Voltage (VCEO) :
- 45V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 weeks ago)
- Qualification Status :
- Not Qualified
- Power Dissipation :
- 30W
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 100mA, 1A
- Factory Lead Time :
- 19 Weeks
- Package / Case :
- TO-225AA, TO-126-3
- JESD-30 Code :
- R-PSFM-T3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 761mg
- Mount :
- Through Hole
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Packaging :
- Tube
- Frequency :
- 3MHz
- Max Power Dissipation :
- 30W
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 3A
- Transition Frequency :
- 3MHz
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Collector Base Voltage (VCBO) :
- 45V
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Max Breakdown Voltage :
- 45V
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Current Rating :
- 3A
- Datasheets
- BD17516STU
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD17516STU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 2V.With a collector emitter saturation voltage of 800mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 800mV @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 3A.A transition frequency of 3MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 3A volts at its maximum.
BD17516STU Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
BD17516STU Applications
There are a lot of ON Semiconductor
BD17516STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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