BD17516STU
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- Mfr.Part #
- BD17516STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 3A TO126-3
- Stock
- 4,925
- In Stock ：
- 4,925
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 3A
- Voltage - Rated DC :
- 45V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 weeks ago)
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- 800mV
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 3A
- Frequency :
- 3MHz
- Packaging :
- Tube
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Transition Frequency :
- 3MHz
- Collector Emitter Voltage (VCEO) :
- 45V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSFM-T3
- Weight :
- 761mg
- Gain Bandwidth Product :
- 3MHz
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 100mA, 1A
- Qualification Status :
- Not Qualified
- Max Breakdown Voltage :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 80V
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Published :
- 2000
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 30W
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- hFE Min :
- 40
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 19 Weeks
- Pbfree Code :
- yes
- Package / Case :
- TO-225AA, TO-126-3
- Collector Base Voltage (VCBO) :
- 45V
- Power Dissipation :
- 30W
- Datasheets
- BD17516STU
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD17516STU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 2V.With a collector emitter saturation voltage of 800mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 800mV @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 3A.A transition frequency of 3MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 3A volts at its maximum.
BD17516STU Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
BD17516STU Applications
There are a lot of ON Semiconductor
BD17516STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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