BD17910STU
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- Mfr.Part #
- BD17910STU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 3A TO126-3
- Stock
- 1,646
- In Stock ：
- 1,646
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- RoHS Compliant
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 30W
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 100mA, 1A
- Current Rating :
- 3A
- Qualification Status :
- Not Qualified
- Weight :
- 761mg
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 3MHz
- Transistor Type :
- NPN
- Base Part Number :
- BD179
- Packaging :
- Tube
- Transition Frequency :
- 3MHz
- Transistor Application :
- SWITCHING
- hFE Min :
- 40
- Element Configuration :
- Single
- Voltage - Rated DC :
- 80V
- Factory Lead Time :
- 6 Weeks
- Collector Base Voltage (VCBO) :
- 80V
- Emitter Base Voltage (VEBO) :
- 5V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Power Dissipation :
- 30W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Frequency :
- 3MHz
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 80V
- Collector Emitter Saturation Voltage :
- 800mV
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Max Collector Current :
- 3A
- Package / Case :
- TO-225AA, TO-126-3
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 80V
- Published :
- 2017
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSFM-T3
- Datasheets
- BD17910STU
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD17910STU Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
BD17910STU Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
BD17910STU Applications
There are a lot of ON Semiconductor
BD17910STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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