BD17910STU
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- Mfr.Part #
- BD17910STU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 3A TO126-3
- Stock
- 1,646
- In Stock ：
- 1,646
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 40
- Pbfree Code :
- yes
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 80V
- Collector Emitter Saturation Voltage :
- 800mV
- Number of Elements :
- 1
- Mount :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Frequency :
- 3MHz
- Voltage - Rated DC :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 100mA, 1A
- Weight :
- 761mg
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 80V
- Max Collector Current :
- 3A
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Base Part Number :
- BD179
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current Rating :
- 3A
- Published :
- 2017
- Power Dissipation :
- 30W
- Packaging :
- Tube
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 80V
- Max Power Dissipation :
- 30W
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Transition Frequency :
- 3MHz
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Qualification Status :
- Not Qualified
- Emitter Base Voltage (VEBO) :
- 5V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-225AA, TO-126-3
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSFM-T3
- Gain Bandwidth Product :
- 3MHz
- Factory Lead Time :
- 6 Weeks
- Datasheets
- BD17910STU
BD17910STU Documents
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD17910STU Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
BD17910STU Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
BD17910STU Applications
There are a lot of ON Semiconductor
BD17910STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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