BCV29E6327HTSA1
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- Mfr.Part #
- BCV29E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 0.5A SOT89
- Stock
- 48,959
- In Stock ：
- 48,959
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Base Part Number :
- BCV29
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Power - Max :
- 1W
- Collector Emitter Saturation Voltage :
- 1V
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 40V
- Max Power Dissipation :
- 1W
- Number of Pins :
- 4
- Mount :
- Surface Mount
- Transistor Type :
- NPN - Darlington
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Terminal Position :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 30V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 30V
- Polarity :
- NPN
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-243AA
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100μA, 100mA
- Terminal Form :
- Flat
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 10V
- Transition Frequency :
- 150MHz
- ECCN Code :
- EAR99
- Frequency - Transition :
- 150MHz
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PSSO-F3
- Collector Emitter Breakdown Voltage :
- 30V
- Case Connection :
- COLLECTOR
- Max Collector Current :
- 500mA
- Published :
- 2007
- Datasheets
- BCV29E6327HTSA1
NPN - Darlington 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-243AA Tape & Reel (TR) Surface Mount
BCV29E6327HTSA1 Overview
This device has a DC current gain of 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.A VCE saturation (Max) of 1V @ 100μA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 500mA volts is possible.
BCV29E6327HTSA1 Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 150MHz
BCV29E6327HTSA1 Applications
There are a lot of Infineon Technologies
BCV29E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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