BCV27,215
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- Mfr.Part #
- BCV27,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- Datasheet
- Download
- Description
- TRANS DARL NPN 30V 500MA SOT23
- Stock
- 1,440
- In Stock ：
- 1,440
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Collector Emitter Breakdown Voltage :
- 30 V
- RoHS :
- Compliant
- Max Breakdown Voltage :
- 30 V
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 40 V
- Series :
- *
- Emitter Base Voltage (VEBO) :
- 10 V
- Max Collector Current :
- 500 mA
- Collector Emitter Voltage (VCEO) :
- 30 V
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 250 mW
- Product Status :
- Active
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 1 V
- Package :
- Bulk
- Lead Free :
- Lead Free
- Max Operating Temperature :
- 150 °C
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Power Dissipation :
- 250 mW
- Transition Frequency :
- 220 MHz
- Length :
- 3 mm
- Polarity :
- NPN
- Radiation Hardening :
- No
- Weight :
- 200.998119 mg
- Height :
- 1 mm
- Min Operating Temperature :
- -65 °C
- Base Product Number :
- BCV27
- Width :
- 1.4 mm
- Number of Elements :
- 1
- Datasheets
- BCV27,215
1 Elements
BCV27215 Overview
As it features a collector emitter saturation voltage of 1 V, it allows for maximum design flexibility.Keeping the emitter base voltage at 10 V can result in a high level of efficiency.There is a transition frequency of 220 MHz in the part.Single BJT transistor can be broken down at a voltage of 30 V volts.When collector current reaches its maximum, it can reach 500 mA volts.
BCV27215 Features
a collector emitter saturation voltage of 1 V
the emitter base voltage is kept at 10 V
a transition frequency of 220 MHz
BCV27215 Applications
There are a lot of NXP
BCV27215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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