BCV26E6327HTSA1
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- Mfr.Part #
- BCV26E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 30V 0.5A SOT-23
- Stock
- 7,507
- In Stock ：
- 7,507
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 30V
- Collector Base Voltage (VCBO) :
- 40V
- Emitter Base Voltage (VEBO) :
- 10V
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 30V
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 1V
- Published :
- 2006
- Terminal Form :
- Gull wing
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 360mW
- Factory Lead Time :
- 26 Weeks
- Pbfree Code :
- yes
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- 1V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Collector Current :
- 500mA
- Transition Frequency :
- 200MHz
- Halogen Free :
- Not Halogen Free
- Current Rating :
- -500mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Voltage - Rated DC :
- -30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Lead Free :
- Lead Free
- Transistor Type :
- PNP - Darlington
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100μA, 100mA
- hFE Min :
- 4000
- Polarity :
- PNP
- Number of Terminations :
- 3
- Max Power Dissipation :
- 360mW
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- BCV26
- Frequency - Transition :
- 200MHz
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Datasheets
- BCV26E6327HTSA1
PNP - Darlington 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCV26E6327HTSA1 Overview
In this device, the DC current gain is 20000 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 100μA, 100mA.Keeping the emitter base voltage at 10V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).200MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
BCV26E6327HTSA1 Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 200MHz
BCV26E6327HTSA1 Applications
There are a lot of Infineon Technologies
BCV26E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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