BCV26

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

30V

Radiation Hardening :

No

Current Rating :

-1.2A

Height :

930μm

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Published :

2000

Contact Plating :

Tin

Factory Lead Time :

17 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Power Dissipation :

350mW

Width :

1.3mm

Number of Terminations :

3

Polarity :

PNP

Length :

2.92mm

Mount :

Surface Mount

Collector Base Voltage (VCBO) :

40V

Vce Saturation (Max) @ Ib, Ic :

1V @ 100μA, 100mA

JESD-609 Code :

e3

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Pbfree Code :

yes

Frequency - Transition :

220MHz

Transition Frequency :

220MHz

Max Power Dissipation :

350mW

Emitter Base Voltage (VEBO) :

10V

Voltage - Rated DC :

-30V

Number of Pins :

3

Terminal Form :

Gull wing

Weight :

30mg

Transistor Element Material :

SILICON

Max Collector Current :

1.2A

hFE Min :

10000

Base Part Number :

BCV26

Max Breakdown Voltage :

30V

Element Configuration :

Single

Transistor Type :

PNP - Darlington

Collector Emitter Saturation Voltage :

1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

100nA ICBO

Package / Case :

TO-236-3, SC-59, SOT-23-3

Collector Emitter Voltage (VCEO) :

30V

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

DC Current Gain (hFE) (Min) @ Ic, Vce :

20000 @ 100mA 5V

Terminal Position :

Dual