BCV27
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- Mfr.Part #
- BCV27
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 1.2A SOT23-3
- Stock
- 14,001
- In Stock ：
- 14,001
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 30mg
- Height :
- 930μm
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 30V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 10V
- Transistor Type :
- NPN - Darlington
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Collector Base Voltage (VCBO) :
- 40V
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Transition Frequency :
- 220MHz
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100μA, 100mA
- Frequency - Transition :
- 220MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 10000
- Polarity :
- NPN
- Power Dissipation :
- 350mW
- Published :
- 2013
- Collector Emitter Breakdown Voltage :
- 30V
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Max Power Dissipation :
- 350mW
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Length :
- 2.92mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Width :
- 1.3mm
- Factory Lead Time :
- 17 Weeks
- Base Part Number :
- BCV27
- Terminal Form :
- Gull wing
- Collector Emitter Saturation Voltage :
- 1V
- Voltage - Rated DC :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 30V
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Max Collector Current :
- 1.2A
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Current Rating :
- 1.2A
- Datasheets
- BCV27
BCV27 Documents
NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCV27 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 100μA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is 1.2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 220MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 1.2A volts.
BCV27 Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 1.2A
a transition frequency of 220MHz
BCV27 Applications
There are a lot of ON Semiconductor
BCV27 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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