BCV27
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- Mfr.Part #
- BCV27
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 1.2A SOT23-3
- Stock
- 14,001
- In Stock ：
- 14,001
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 40V
- JESD-609 Code :
- e3
- Length :
- 2.92mm
- REACH SVHC :
- No SVHC
- Frequency - Transition :
- 220MHz
- Transition Frequency :
- 220MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 1.2A
- Collector Emitter Saturation Voltage :
- 1V
- Base Part Number :
- BCV27
- hFE Min :
- 10000
- Terminal Form :
- Gull wing
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Current Rating :
- 1.2A
- Factory Lead Time :
- 17 Weeks
- Power Dissipation :
- 350mW
- Max Breakdown Voltage :
- 30V
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 350mW
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN - Darlington
- Number of Elements :
- 1
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 10V
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2013
- Voltage - Rated DC :
- 30V
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 30mg
- Polarity :
- NPN
- Width :
- 1.3mm
- Height :
- 930μm
- Collector Emitter Voltage (VCEO) :
- 30V
- Collector Emitter Breakdown Voltage :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100μA, 100mA
- Datasheets
- BCV27
NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCV27 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 100μA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is 1.2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 220MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 1.2A volts.
BCV27 Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 1.2A
a transition frequency of 220MHz
BCV27 Applications
There are a lot of ON Semiconductor
BCV27 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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