BCV26,235
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- Mfr.Part #
- BCV26,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 30V 0.5A TO236AB
- Stock
- 10,000
- In Stock ：
- 10,000
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100μA, 100mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- 1V
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP - Darlington
- Polarity :
- PNP
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 30V
- Transistor Application :
- AMPLIFIER
- Element Configuration :
- Single
- Power - Max :
- 250mW
- Series :
- Automotive, AEC-Q101
- Transition Frequency :
- 220MHz
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 250mW
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 4 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 10V
- Collector Base Voltage (VCBO) :
- 40V
- Mount :
- Surface Mount
- Max Collector Current :
- 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Frequency - Transition :
- 220MHz
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 30V
- Published :
- 2006
- Base Part Number :
- BCV26
- Datasheets
- BCV26,235
PNP - Darlington 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCV26,235 Overview
In this device, the DC current gain is 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 100μA, 100mA.With the emitter base voltage set at 10V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 220MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
BCV26,235 Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 220MHz
BCV26,235 Applications
There are a lot of Nexperia USA Inc.
BCV26,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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