BCV27E6327HTSA1
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- Mfr.Part #
- BCV27E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 0.5A SOT23
- Stock
- 60,788
- In Stock ：
- 60,788
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 500mA
- Collector Base Voltage (VCBO) :
- 40V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100μA, 100mA
- Current Rating :
- 500mA
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 10V
- Transition Frequency :
- 170MHz
- Max Breakdown Voltage :
- 30V
- Halogen Free :
- Not Halogen Free
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Polarity :
- NPN
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Collector Emitter Breakdown Voltage :
- 30V
- Mount :
- Surface Mount
- Base Part Number :
- BCV27
- Number of Pins :
- 3
- Voltage - Rated DC :
- 30V
- Factory Lead Time :
- 26 Weeks
- Number of Terminations :
- 3
- Transistor Type :
- NPN - Darlington
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 1V
- Number of Elements :
- 1
- hFE Min :
- 4000
- Collector Emitter Voltage (VCEO) :
- 1V
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Frequency - Transition :
- 170MHz
- Pbfree Code :
- yes
- Published :
- 2006
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Power Dissipation :
- 360mW
- Max Power Dissipation :
- 360mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- BCV27E6327HTSA1
NPN - Darlington 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCV27E6327HTSA1 Overview
This device has a DC current gain of 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.A VCE saturation (Max) of 1V @ 100μA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 170MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 500mA volts is possible.
BCV27E6327HTSA1 Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 170MHz
BCV27E6327HTSA1 Applications
There are a lot of Infineon Technologies
BCV27E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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