BCV26_L99Z
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- Mfr.Part #
- BCV26_L99Z
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 30V 1.2A SOT23-3
- Stock
- 15,927
- In Stock ：
- 15,927
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Frequency - Transition :
- 220MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP - Darlington
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100μA, 100mA
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Current - Collector (Ic) (Max) :
- 1.2A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Power - Max :
- 350mW
- Datasheets
- BCV26_L99Z
PNP - Darlington -55°C~150°C TJ 100nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCV26_L99Z Overview
In this device, the DC current gain is 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 100μA, 100mA.There is a 30V maximal voltage in the device due to collector-emitter breakdown.
BCV26_L99Z Features
the DC current gain for this device is 20000 @ 100mA 5V
the vce saturation(Max) is 1V @ 100μA, 100mA
BCV26_L99Z Applications
There are a lot of ON Semiconductor
BCV26_L99Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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