BCV28H6327XTSA1

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Mfr.Part #
BCV28H6327XTSA1
Manufacturer
Infineon Technologies
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS PNP DARL 30V 0.5A SOT89
Stock
54,665
In Stock :
54,665

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - Bipolar (BJT) - Single
Contact Plating :
Tin
Emitter Base Voltage (VEBO) :
10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transition Frequency :
200MHz
Terminal Form :
Flat
Collector Emitter Saturation Voltage :
1V
Element Configuration :
Single
Polarity :
PNP
Length :
4.5mm
Height :
1.5mm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vce Saturation (Max) @ Ib, Ic :
1V @ 100μA, 100mA
Series :
Automotive, AEC-Q101
Factory Lead Time :
8 Weeks
Mount :
Surface Mount
Power - Max :
1W
Transistor Type :
PNP - Darlington
Number of Elements :
1
Transistor Application :
AMPLIFIER
Transistor Element Material :
SILICON
Case Connection :
COLLECTOR
Width :
2.5mm
Collector Emitter Breakdown Voltage :
30V
Number of Pins :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
20000 @ 100mA 5V
Collector Emitter Voltage (VCEO) :
1V
Published :
2011
Packaging :
Tape and Reel (TR)
Package / Case :
TO-243AA
Collector Base Voltage (VCBO) :
40V
Operating Temperature :
150°C TJ
Current - Collector Cutoff (Max) :
100nA ICBO
RoHS Status :
ROHS3 Compliant
Max Power Dissipation :
1W
hFE Min :
4000
Frequency - Transition :
200MHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
Max Collector Current :
500mA
Mounting Type :
Surface Mount
Datasheets
BCV28H6327XTSA1
Introducing Transistors - Bipolar (BJT) - Single Infineon Technologies BCV28H6327XTSA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-243AA, Operating Temperature:150°C TJ, Number of Terminations:3, Mounting Type:Surface Mount, BCV28H6327XTSA1 pinout, BCV28H6327XTSA1 datasheet PDF, BCV28H6327XTSA1 amp .Beyond Transistors - Bipolar (BJT) - Single Infineon Technologies BCV28H6327XTSA1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BCV28H6327XTSA1


PNP - Darlington 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-243AA Tape & Reel (TR) Surface Mount

BCV28H6327XTSA1 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20000 @ 100mA 5V DC current gain.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 10V can result in a high level of efficiency.There is a transition frequency of 200MHz in the part.When collector current reaches its maximum, it can reach 500mA volts.

BCV28H6327XTSA1 Features


the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 200MHz


BCV28H6327XTSA1 Applications


There are a lot of Infineon Technologies
BCV28H6327XTSA1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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