BCR583E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Polarity/Channel Type :

PNP

Power - Max :

330mW

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Resistor - Emitter Base (R2) :

10 k Ω

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 50mA 5V

Number of Elements :

1

Transistor Type :

PNP - Pre-Biased

Terminal Position :

Dual

Pbfree Code :

yes

Surface Mount :

yes

Published :

2011

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Voltage - Collector Emitter Breakdown (Max) :

50V

Base Part Number :

BCR583

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency - Transition :

150MHz

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Current - Collector Cutoff (Max) :

100nA ICBO

JESD-30 Code :

R-PDSO-G3

Transition Frequency :

150MHz

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Collector (Ic) (Max) :

500mA

Factory Lead Time :

26 Weeks

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Resistor - Base (R1) :

10 k Ω

Number of Terminations :

3