BCR533E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Collector Emitter Voltage (VCEO) :

50V

Max Power Dissipation :

330mW

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Max Junction Temperature (Tj) :

150°C

Mounting Type :

Surface Mount

Power Dissipation :

330mW

Collector Base Voltage (VCBO) :

50V

Min Operating Temperature :

-65°C

Gain Bandwidth Product :

100MHz

Collector Emitter Saturation Voltage :

300mV

Transistor Type :

NPN - Pre-Biased

hFE Min :

70

Resistor - Base (R1) :

10 k Ω

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Terminal Position :

Dual

Pbfree Code :

yes

Resistor - Emitter Base (R2) :

10 k Ω

Terminal Form :

Gull wing

Voltage - Rated DC :

50V

Transition Frequency :

100MHz

Current Rating :

500mA

Number of Terminations :

3

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Number of Elements :

1

Factory Lead Time :

26 Weeks

Max Breakdown Voltage :

50V

Number of Pins :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 50mA 5V

Radiation Hardening :

No

Published :

2011

Max Operating Temperature :

150°C

Halogen Free :

Not Halogen Free

Polarity :

NPN

Collector Emitter Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

100nA ICBO

Lead Free :

Lead Free

Max Collector Current :

500mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Height :

1.1mm

Mount :

Surface Mount

Base Part Number :

BCR533