BCR533E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 50mA 5V

Collector Emitter Saturation Voltage :

300mV

Transistor Type :

NPN - Pre-Biased

Current - Collector Cutoff (Max) :

100nA ICBO

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Polarity :

NPN

hFE Min :

70

Max Collector Current :

500mA

Min Operating Temperature :

-65°C

Mount :

Surface Mount

ECCN Code :

EAR99

Halogen Free :

Not Halogen Free

Gain Bandwidth Product :

100MHz

Collector Base Voltage (VCBO) :

50V

Collector Emitter Voltage (VCEO) :

50V

Contact Plating :

Tin

Pbfree Code :

yes

Mounting Type :

Surface Mount

Number of Elements :

1

Max Operating Temperature :

150°C

Transistor Application :

SWITCHING

Max Breakdown Voltage :

50V

Terminal Form :

Gull wing

Resistor - Emitter Base (R2) :

10 k Ω

Voltage - Rated DC :

50V

Collector Emitter Breakdown Voltage :

50V

Resistor - Base (R1) :

10 k Ω

Terminal Position :

Dual

Published :

2011

JESD-609 Code :

e3

Transition Frequency :

100MHz

Base Part Number :

BCR533

Element Configuration :

Single

Power Dissipation :

330mW

RoHS Status :

ROHS3 Compliant

Height :

1.1mm

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

330mW

Current Rating :

500mA

Number of Pins :

3

Factory Lead Time :

26 Weeks

Package / Case :

TO-236-3, SC-59, SOT-23-3

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Junction Temperature (Tj) :

150°C

Number of Terminations :

3

Lead Free :

Lead Free