BCR533E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Collector Emitter Saturation Voltage :

300mV

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Collector Current :

500mA

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Terminal Position :

Dual

Voltage - Rated DC :

50V

Mounting Type :

Surface Mount

Resistor - Emitter Base (R2) :

10 k Ω

Max Power Dissipation :

330mW

Height :

1.1mm

Min Operating Temperature :

-65°C

hFE Min :

70

RoHS Status :

ROHS3 Compliant

Power Dissipation :

330mW

Collector Base Voltage (VCBO) :

50V

Collector Emitter Breakdown Voltage :

50V

Factory Lead Time :

26 Weeks

Mount :

Surface Mount

Transistor Application :

SWITCHING

Halogen Free :

Not Halogen Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 50mA 5V

Transistor Type :

NPN - Pre-Biased

Current - Collector Cutoff (Max) :

100nA ICBO

Radiation Hardening :

No

Number of Pins :

3

Max Operating Temperature :

150°C

Published :

2011

Lead Free :

Lead Free

Pbfree Code :

yes

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Junction Temperature (Tj) :

150°C

Number of Elements :

1

Max Breakdown Voltage :

50V

Terminal Form :

Gull wing

Gain Bandwidth Product :

100MHz

Number of Terminations :

3

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Collector Emitter Voltage (VCEO) :

50V

Resistor - Base (R1) :

10 k Ω

Transition Frequency :

100MHz

Polarity :

NPN

Base Part Number :

BCR533

Element Configuration :

Single

Contact Plating :

Tin

Current Rating :

500mA