BCR523E6433HTMA1
- Mfr.Part #
- BCR523E6433HTMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PREBIAS NPN 300MW SOT23-3
- Stock
- 18,551
- In Stock :
- 18,551
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Transistor Type :
- NPN - Pre-Biased
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Published :
- 2004
- Number of Terminations :
- 6
- Frequency - Transition :
- 100MHz
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 50mA 5V
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Collector Emitter Voltage (VCEO) :
- 50V
- Resistor - Base (R1) :
- 1 k Ω
- Factory Lead Time :
- 26 Weeks
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Polarity :
- NPN
- Max Operating Temperature :
- 150°C
- Max Collector Current :
- 500mA
- Max Power Dissipation :
- 330mW
- Voltage - Rated DC :
- 50V
- Base Part Number :
- BCR523
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 2.5mA, 50mA
- Current Rating :
- 500mA
- Number of Pins :
- 3
- Transition Frequency :
- 100MHz
- Min Operating Temperature :
- -65°C
- Resistor - Emitter Base (R2) :
- 10 k Ω
- ECCN Code :
- EAR99
- Additional Feature :
- BUILT IN BIAS RESISTOR RATIO IS 0.1
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 50V
- JESD-30 Code :
- R-PDSO-G6
- Mounting Type :
- Surface Mount
- Datasheets
- BCR523E6433HTMA1

BCR523E6433HTMA1 datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Infineon Technologies stock available at
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