BCR553E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Number of Terminations :

3

Pbfree Code :

yes

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Terminal Position :

Dual

Current - Collector (Ic) (Max) :

500mA

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Voltage - Collector Emitter Breakdown (Max) :

50V

Published :

2011

Power - Max :

330mW

Frequency - Transition :

150MHz

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Surface Mount :

yes

Current - Collector Cutoff (Max) :

100nA ICBO

Resistor - Emitter Base (R2) :

2.2 k Ω

ECCN Code :

EAR99

Transistor Type :

PNP - Pre-Biased

Transistor Element Material :

SILICON

Resistor - Base (R1) :

2.2 k Ω

JESD-30 Code :

R-PDSO-G3

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Factory Lead Time :

26 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

RoHS Status :

ROHS3 Compliant

Transition Frequency :

150MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 50mA 5V

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Polarity/Channel Type :

PNP