BCR523E6327HTSA1
- Mfr.Part #
- BCR523E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PREBIAS NPN 0.33W SOT23-3
- Stock
- 73,833
- In Stock :
- 73,833
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- ECCN Code :
- EAR99
- hFE Min :
- 70
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity :
- NPN
- Base Part Number :
- BCR523
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Form :
- Gull wing
- Collector Emitter Saturation Voltage :
- 300mV
- Height :
- 1.1mm
- Transistor Type :
- NPN - Pre-Biased
- Mount :
- Surface Mount
- Halogen Free :
- Not Halogen Free
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- Factory Lead Time :
- 26 Weeks
- Resistor - Base (R1) :
- 1 k Ω
- Resistor - Emitter Base (R2) :
- 10 k Ω
- Voltage - Rated DC :
- 50V
- Termination :
- SMD/SMT
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 50V
- Published :
- 2002
- Frequency - Transition :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 6
- Max Collector Current :
- 500mA
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 50mA 5V
- Max Power Dissipation :
- 330mW
- Collector Emitter Breakdown Voltage :
- 50V
- Terminal Position :
- Dual
- Max Junction Temperature (Tj) :
- 150°C
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 50V
- Current Rating :
- 500mA
- Power Dissipation :
- 330mW
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 2.5mA, 50mA
- Max Operating Temperature :
- 150°C
- Transition Frequency :
- 100MHz
- Number of Pins :
- 3
- JESD-30 Code :
- R-PDSO-G6
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 50V
- Min Operating Temperature :
- -65°C
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- BCR523E6327HTSA1

BCR523E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Infineon Technologies stock available at
BCR523E6327HTSA1 Description
The BCR523E6327HTSA1 is an NPN Silicon Digital Transistor with a built-in bias resistor (R1= 1 kΩ, R2= 10 kΩ).
BCR523E6327HTSA1 Feature
-
BCR523U: Two (galvanic) internal isolated transistors with good matching in one package
-
Pb-free (RoHS compliant) package
-
Available in the SOT-23 Package
-
Qualified according to AEC Q101
-
NPN Typ.
BCR523E6327HTSA1 Applications
-
Driver circuit
-
Interface circuit
-
Switching circuit
-
Inverter
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