BCR512E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Package / Case :

TO-236-3, SC-59, SOT-23-3

Radiation Hardening :

No

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

300mV

Terminal Form :

Gull wing

Current Rating :

500mA

Transistor Application :

SWITCHING

Width :

1.3mm

Terminal Position :

Dual

Current - Collector Cutoff (Max) :

100nA ICBO

Resistor - Base (R1) :

4.7 k Ω

Height :

1.1mm

Max Junction Temperature (Tj) :

150°C

Voltage - Rated DC :

50V

hFE Min :

60

Transistor Type :

NPN - Pre-Biased

Max Operating Temperature :

150°C

Max Power Dissipation :

330mW

Collector Base Voltage (VCBO) :

50V

Min Operating Temperature :

-65°C

Max Breakdown Voltage :

50V

Power Dissipation :

330mW

Gain Bandwidth Product :

100MHz

Factory Lead Time :

26 Weeks

Mount :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Halogen Free :

Not Halogen Free

Number of Pins :

3

Collector Emitter Breakdown Voltage :

50V

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity :

NPN

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

50V

Resistor - Emitter Base (R2) :

4.7 k Ω

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 50mA 5V

Terminal Finish :

Tin (Sn)

Published :

2002

Transition Frequency :

100MHz

Base Part Number :

BCR512

Element Configuration :

Single

Length :

2.9mm

Max Collector Current :

500mA

Lead Free :

Lead Free

Number of Terminations :

3

ECCN Code :

EAR99