BCR573E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Base Part Number :

BCR573

JESD-609 Code :

e3

Current - Collector Cutoff (Max) :

100nA ICBO

Number of Elements :

1

Polarity/Channel Type :

PNP

Packaging :

Tape and Reel (TR)

Voltage - Collector Emitter Breakdown (Max) :

50V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 0.1

Current - Collector (Ic) (Max) :

500mA

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Terminal Position :

Dual

Transistor Type :

PNP - Pre-Biased

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-G3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Resistor - Emitter Base (R2) :

10 k Ω

Factory Lead Time :

26 Weeks

Transistor Element Material :

SILICON

Resistor - Base (R1) :

1 k Ω

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Transition Frequency :

150MHz

Terminal Finish :

Tin (Sn)

Power - Max :

330mW

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Form :

Gull wing

Surface Mount :

yes

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Published :

2011

Frequency - Transition :

150MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 50mA 5V