APTMC120AM08CD3AG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

1.1kW

Published :

1997

Gate Charge (Qg) (Max) @ Vgs :

490nC @ 20V

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-40°C~150°C TJ

Number of Elements :

1

Package / Case :

D-3 Module

Rds On (Max) @ Id, Vgs :

10m Ω @ 200A, 20V

ECCN Code :

EAR99

Packaging :

Bulk

FET Type :

2 N-Channel (Half Bridge)

Current - Continuous Drain (Id) @ 25°C :

250A Tc

Factory Lead Time :

22 Weeks

Mount :

Chassis Mount

Vgs(th) (Max) @ Id :

2.2V @ 10mA (Typ)

Drain to Source Voltage (Vdss) :

1200V 1.2kV

Power - Max :

1100W

Lead Free :

Lead Free

FET Feature :

Silicon Carbide (SiC)

RoHS Status :

RoHS Compliant

Mounting Type :

Chassis Mount

Continuous Drain Current (ID) :

250A

Drain Current-Max (Abs) (ID) :

260A

Input Capacitance (Ciss) (Max) @ Vds :

9500pF @ 1000V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)