APTM60H23FT1G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Case Connection :

Isolated

Turn-Off Delay Time :

115 ns

Configuration :

COMPLEX

Factory Lead Time :

36 Weeks

Mount :

Chassis Mount, Screw

Rise Time :

43ns

Published :

2007

FET Type :

4 N-Channel (H-Bridge)

Input Capacitance (Ciss) (Max) @ Vds :

5316pF @ 25V

Rds On (Max) @ Id, Vgs :

276m Ω @ 17A, 10V

Drain to Source Voltage (Vdss) :

600V

Power Dissipation :

208W

FET Feature :

Standard

ECCN Code :

EAR99

Fall Time (Typ) :

34 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

20A

Gate to Source Voltage (Vgs) :

30V

Transistor Element Material :

SILICON

Packaging :

Bulk

Transistor Application :

SWITCHING

Number of Terminations :

12

RoHS Status :

RoHS Compliant

Operating Temperature :

-40°C~150°C TJ

DS Breakdown Voltage-Min :

600V

Pin Count :

12

Terminal Form :

UNSPECIFIED

Max Power Dissipation :

208W

Terminal Position :

UPPER

Number of Elements :

4

Drain-source On Resistance-Max :

0.23Ohm

Mounting Type :

Chassis Mount

Gate Charge (Qg) (Max) @ Vgs :

165nC @ 10V

Package / Case :

SP1

Number of Pins :

1

Vgs(th) (Max) @ Id :

5V @ 1mA

Radiation Hardening :

No

Turn On Delay Time :

37 ns