APTM60A23FT1G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Package / Case :

SP1

Drain to Source Voltage (Vdss) :

600V

Pin Count :

12

Rds On (Max) @ Id, Vgs :

276m Ω @ 17A, 10V

Terminal Position :

UPPER

DS Breakdown Voltage-Min :

600V

Mount :

Chassis Mount, Screw

FET Feature :

Standard

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Chassis Mount

Number of Pins :

1

FET Type :

2 N-Channel (Half Bridge)

Operating Temperature :

-40°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

5316pF @ 25V

Terminal Form :

UNSPECIFIED

Vgs(th) (Max) @ Id :

5V @ 1mA

Power Dissipation :

208W

Number of Terminations :

12

Published :

2007

Reach Compliance Code :

Unknown

Continuous Drain Current (ID) :

20A

Case Connection :

Isolated

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Max Power Dissipation :

208W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Bulk

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

2

Additional Feature :

AVALANCHE RATED

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

165nC @ 10V