APTM60A11FT1G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Package / Case :

SP1

Input Capacitance :

10.552nF

Packaging :

Bulk

Rds On (Max) @ Id, Vgs :

132mOhm @ 33A, 10V

Drain to Source Voltage (Vdss) :

600V

Published :

2007

Radiation Hardening :

No

Power - Max :

390W

Turn-Off Delay Time :

225 ns

Number of Elements :

2

Rds On Max :

132 mΩ

Max Power Dissipation :

390W

Operating Temperature :

-40°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Supplier Device Package :

SP1

Fall Time (Typ) :

70 ns

Continuous Drain Current (ID) :

40A

Number of Pins :

1

Current - Continuous Drain (Id) @ 25°C :

40A

Turn On Delay Time :

75 ns

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

5V @ 2.5mA

FET Feature :

Standard

Max Operating Temperature :

150°C

Gate Charge (Qg) (Max) @ Vgs :

330nC @ 10V

Rise Time :

85ns

FET Type :

2 N-Channel (Half Bridge)

Mount :

Chassis Mount, Screw

Input Capacitance (Ciss) (Max) @ Vds :

10552pF @ 25V

Power Dissipation :

390W

Mounting Type :

Chassis Mount

RoHS Status :

RoHS Compliant

Min Operating Temperature :

-40°C

Factory Lead Time :

36 Weeks