APTM50TAM65FPG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn-Off Delay Time :

75 ns

Max Power Dissipation :

390W

Number of Pins :

6

Factory Lead Time :

36 Weeks

Additional Feature :

AVALANCHE RATED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

500V

Terminal Finish :

TIN SILVER COPPER

Rds On (Max) @ Id, Vgs :

78m Ω @ 25.5A, 10V

Pbfree Code :

yes

Case Connection :

Isolated

ECCN Code :

EAR99

Number of Terminations :

21

Rise Time :

38ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Bulk

Avalanche Energy Rating (Eas) :

3000 mJ

FET Type :

6 N-Channel (3-Phase Bridge)

Configuration :

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

500V

Terminal Form :

UNSPECIFIED

Mount :

Chassis Mount, Screw

Pin Count :

21

Published :

2012

Pulsed Drain Current-Max (IDM) :

204A

JESD-30 Code :

R-XUFM-X21

Gate to Source Voltage (Vgs) :

30V

Terminal Position :

UPPER

Power Dissipation :

390W

Fall Time (Typ) :

93 ns

Mounting Type :

Chassis Mount

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

7000pF @ 25V

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Turn On Delay Time :

21 ns

Transistor Application :

SWITCHING

Number of Elements :

6

FET Feature :

Standard

Continuous Drain Current (ID) :

51A

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Package / Case :

SP6

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.078Ohm

JESD-609 Code :

e1

Radiation Hardening :

No

Operating Temperature :

-40°C~150°C TJ