APTM50TAM65FPG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Avalanche Energy Rating (Eas) :

3000 mJ

FET Type :

6 N-Channel (3-Phase Bridge)

Configuration :

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

JESD-30 Code :

R-XUFM-X21

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

7000pF @ 25V

Additional Feature :

AVALANCHE RATED

Number of Terminations :

21

Terminal Finish :

TIN SILVER COPPER

Factory Lead Time :

36 Weeks

Drain-source On Resistance-Max :

0.078Ohm

Turn-Off Delay Time :

75 ns

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Rise Time :

38ns

Power Dissipation :

390W

FET Feature :

Standard

Radiation Hardening :

No

Packaging :

Bulk

Package / Case :

SP6

Continuous Drain Current (ID) :

51A

Number of Elements :

6

Published :

2012

Transistor Application :

SWITCHING

Terminal Position :

UPPER

Pulsed Drain Current-Max (IDM) :

204A

Mounting Type :

Chassis Mount

Mount :

Chassis Mount, Screw

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

UNSPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Turn On Delay Time :

21 ns

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

78m Ω @ 25.5A, 10V

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Drain to Source Voltage (Vdss) :

500V

Operating Temperature :

-40°C~150°C TJ

ECCN Code :

EAR99

Case Connection :

Isolated

JESD-609 Code :

e1

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

DS Breakdown Voltage-Min :

500V

Fall Time (Typ) :

93 ns

Max Power Dissipation :

390W

Pin Count :

21