APTM50HM75STG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

4 N-Channel (H-Bridge)

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Power Dissipation :

357W

Terminal Position :

UPPER

Operating Temperature :

-40°C~150°C TJ

Package / Case :

SP4

Transistor Element Material :

SILICON

Factory Lead Time :

36 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

77 ns

JESD-609 Code :

e1

Packaging :

Bulk

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

2500 mJ

RoHS Status :

RoHS Compliant

Case Connection :

Isolated

Drain to Source Voltage (Vdss) :

500V

Rds On (Max) @ Id, Vgs :

90m Ω @ 23A, 10V

DS Breakdown Voltage-Min :

500V

Gate to Source Voltage (Vgs) :

30V

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Terminal Finish :

TIN SILVER COPPER

Pin Count :

14

Number of Elements :

4

Terminal Form :

UNSPECIFIED

Turn-Off Delay Time :

87 ns

Number of Pins :

4

Additional Feature :

AVALANCHE RATED

Published :

1999

Drain-source On Resistance-Max :

0.09Ohm

FET Feature :

Standard

Turn On Delay Time :

18 ns

Rise Time :

35ns

Continuous Drain Current (ID) :

46A

Mounting Type :

Chassis Mount

Input Capacitance (Ciss) (Max) @ Vds :

5600pF @ 25V

Max Power Dissipation :

357W

Mount :

Chassis Mount, Screw

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

14

Gate Charge (Qg) (Max) @ Vgs :

123nC @ 10V