APTM50HM75SCTG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

36 Weeks

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

2500 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

5590pF @ 25V

DS Breakdown Voltage-Min :

500V

RoHS Status :

RoHS Compliant

Packaging :

Bulk

Operating Temperature :

-40°C~150°C TJ

Pbfree Code :

yes

Mounting Type :

Chassis Mount

Drain-source On Resistance-Max :

0.09Ohm

Case Connection :

Isolated

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e1

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

46A

Transistor Application :

SWITCHING

FET Feature :

Silicon Carbide (SiC)

Package / Case :

SP4

Drain to Source Voltage (Vdss) :

500V

Number of Elements :

4

Turn On Delay Time :

18 ns

Pin Count :

14

Max Power Dissipation :

357W

Additional Feature :

AVALANCHE RATED

Number of Terminations :

14

Terminal Finish :

TIN SILVER COPPER

Fall Time (Typ) :

77 ns

FET Type :

4 N-Channel (H-Bridge)

Power Dissipation :

357W

Gate Charge (Qg) (Max) @ Vgs :

123nC @ 10V

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Rise Time :

35ns

Turn-Off Delay Time :

87 ns

Terminal Form :

UNSPECIFIED

Number of Pins :

4

Terminal Position :

UPPER

Published :

1997

Mount :

Chassis Mount, Screw

Rds On (Max) @ Id, Vgs :

90m Ω @ 23A, 10V