APTM50HM75SCTG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

DS Breakdown Voltage-Min :

500V

Operating Temperature :

-40°C~150°C TJ

Radiation Hardening :

No

Rise Time :

35ns

Avalanche Energy Rating (Eas) :

2500 mJ

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Gate Charge (Qg) (Max) @ Vgs :

123nC @ 10V

JESD-609 Code :

e1

Package / Case :

SP4

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn On Delay Time :

18 ns

Fall Time (Typ) :

77 ns

Published :

1997

Pbfree Code :

yes

Case Connection :

Isolated

Number of Elements :

4

Terminal Finish :

TIN SILVER COPPER

Drain to Source Voltage (Vdss) :

500V

Power Dissipation :

357W

Terminal Position :

UPPER

FET Feature :

Silicon Carbide (SiC)

Continuous Drain Current (ID) :

46A

Drain-source On Resistance-Max :

0.09Ohm

Mount :

Chassis Mount, Screw

FET Type :

4 N-Channel (H-Bridge)

RoHS Status :

RoHS Compliant

Packaging :

Bulk

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Max Power Dissipation :

357W

Input Capacitance (Ciss) (Max) @ Vds :

5590pF @ 25V

Factory Lead Time :

36 Weeks

Number of Pins :

4

Terminal Form :

UNSPECIFIED

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Rds On (Max) @ Id, Vgs :

90m Ω @ 23A, 10V

Pin Count :

14

Mounting Type :

Chassis Mount

Additional Feature :

AVALANCHE RATED

Turn-Off Delay Time :

87 ns

Number of Terminations :

14

Operating Mode :

ENHANCEMENT MODE