APTM50HM75FT3G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

Pbfree Code :

yes

Rise Time :

35ns

FET Type :

4 N-Channel (H-Bridge)

Package / Case :

SP3

RoHS Status :

RoHS Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

90m Ω @ 23A, 10V

Number of Elements :

4

Mounting Type :

Chassis Mount

Power Dissipation :

357W

Configuration :

COMPLEX

Drain-source On Resistance-Max :

0.09Ohm

Case Connection :

Isolated

Operating Temperature :

-40°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

123nC @ 10V

JESD-609 Code :

e1

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

500V

Continuous Drain Current (ID) :

46A

Gate to Source Voltage (Vgs) :

30V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

UPPER

Packaging :

Bulk

Fall Time (Typ) :

77 ns

Additional Feature :

AVALANCHE RATED

Mount :

Chassis Mount, Screw

Factory Lead Time :

36 Weeks

Turn On Delay Time :

18 ns

Number of Pins :

3

Terminal Finish :

TIN SILVER COPPER

Pin Count :

25

Input Capacitance (Ciss) (Max) @ Vds :

5600pF @ 25V

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

2500 mJ

Max Power Dissipation :

357W

Terminal Form :

UNSPECIFIED

JESD-30 Code :

R-XUFM-X25

Drain to Source Voltage (Vdss) :

500V

FET Feature :

Standard

Number of Terminations :

25

Turn-Off Delay Time :

87 ns

Operating Mode :

ENHANCEMENT MODE

Published :

2006

Vgs(th) (Max) @ Id :

5V @ 2.5mA