APTM50HM75FT3G
- Mfr.Part #
- APTM50HM75FT3G
- Manufacturer
- Microchip Technology
- Package / Case
- SP3
- Datasheet
- Download
- Description
- MOSFET 4N-CH 500V 46A SP3
- Stock
- 5,489
- In Stock :
- 5,489
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Pin Count :
- 25
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Rise Time :
- 35ns
- Terminal Finish :
- TIN SILVER COPPER
- Package / Case :
- SP3
- Terminal Form :
- UNSPECIFIED
- Fall Time (Typ) :
- 77 ns
- Max Power Dissipation :
- 357W
- Configuration :
- COMPLEX
- Factory Lead Time :
- 36 Weeks
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 23A, 10V
- Turn-Off Delay Time :
- 87 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Position :
- UPPER
- JESD-30 Code :
- R-XUFM-X25
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 5600pF @ 25V
- Case Connection :
- Isolated
- Drain-source On Resistance-Max :
- 0.09Ohm
- Continuous Drain Current (ID) :
- 46A
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- DS Breakdown Voltage-Min :
- 500V
- Additional Feature :
- AVALANCHE RATED
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- RoHS Status :
- RoHS Compliant
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 123nC @ 10V
- FET Type :
- 4 N-Channel (H-Bridge)
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Number of Elements :
- 4
- Operating Temperature :
- -40°C~150°C TJ
- FET Feature :
- Standard
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2006
- Mounting Type :
- Chassis Mount
- Turn On Delay Time :
- 18 ns
- Drain to Source Voltage (Vdss) :
- 500V
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 25
- Power Dissipation :
- 357W
- JESD-609 Code :
- e1
- Mount :
- Chassis Mount, Screw
- Datasheets
- APTM50HM75FT3G
APTM50HM75FT3G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Microsemi Corporation stock available at
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