APTM50HM65FTG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2006

Packaging :

Bulk

Number of Terminations :

14

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-40°C~150°C TJ

Number of Elements :

4

Additional Feature :

AVALANCHE RATED

ECCN Code :

EAR99

Mount :

Chassis Mount, Screw

Avalanche Energy Rating (Eas) :

3000 mJ

Factory Lead Time :

36 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Chassis Mount

DS Breakdown Voltage-Min :

500V

Terminal Position :

UPPER

Transistor Element Material :

SILICON

Number of Pins :

4

Power Dissipation :

390W

Pbfree Code :

yes

Turn On Delay Time :

21 ns

Max Power Dissipation :

390W

Radiation Hardening :

No

Terminal Finish :

TIN SILVER COPPER

Case Connection :

Isolated

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

FET Type :

4 N-Channel (H-Bridge)

Rds On (Max) @ Id, Vgs :

78m Ω @ 25.5A, 10V

Drain-source On Resistance-Max :

0.078Ohm

Continuous Drain Current (ID) :

51A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

14

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

93 ns

JESD-609 Code :

e1

Terminal Form :

UNSPECIFIED

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Rise Time :

38ns

Drain to Source Voltage (Vdss) :

500V

Package / Case :

SP4

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Input Capacitance (Ciss) (Max) @ Vds :

7000pF @ 25V

Turn-Off Delay Time :

75 ns

FET Feature :

Standard