APTM50HM65FTG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

ECCN Code :

EAR99

Factory Lead Time :

36 Weeks

Number of Pins :

4

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Drain-source On Resistance-Max :

0.078Ohm

DS Breakdown Voltage-Min :

500V

Rise Time :

38ns

Continuous Drain Current (ID) :

51A

Pbfree Code :

yes

Mounting Type :

Chassis Mount

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

5V @ 2.5mA

FET Feature :

Standard

Power Dissipation :

390W

Turn-Off Delay Time :

75 ns

Transistor Application :

SWITCHING

Packaging :

Bulk

Published :

2006

Gate to Source Voltage (Vgs) :

30V

Case Connection :

Isolated

Mount :

Chassis Mount, Screw

Number of Elements :

4

Package / Case :

SP4

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

UPPER

Pin Count :

14

RoHS Status :

RoHS Compliant

Avalanche Energy Rating (Eas) :

3000 mJ

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

UNSPECIFIED

JESD-609 Code :

e1

Fall Time (Typ) :

93 ns

FET Type :

4 N-Channel (H-Bridge)

Additional Feature :

AVALANCHE RATED

Terminal Finish :

TIN SILVER COPPER

Max Power Dissipation :

390W

Operating Temperature :

-40°C~150°C TJ

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

500V

Input Capacitance (Ciss) (Max) @ Vds :

7000pF @ 25V

Rds On (Max) @ Id, Vgs :

78m Ω @ 25.5A, 10V

Turn On Delay Time :

21 ns

Number of Terminations :

14