APTM50HM65FT3G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Drain-source On Resistance-Max :

0.078Ohm

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

390W

Factory Lead Time :

16 Weeks

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Chassis Mount

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Packaging :

Bulk

Rds On (Max) @ Id, Vgs :

78m Ω @ 25.5A, 10V

Continuous Drain Current (ID) :

51A

Turn On Delay Time :

21 ns

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

500V

Turn-Off Delay Time :

75 ns

Case Connection :

Isolated

Operating Mode :

ENHANCEMENT MODE

Rise Time :

38ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

4

Drain to Source Voltage (Vdss) :

500V

FET Feature :

Standard

Terminal Finish :

TIN SILVER COPPER

Radiation Hardening :

No

FET Type :

4 N-Channel (H-Bridge)

Published :

2006

Pin Count :

25

Terminal Form :

UNSPECIFIED

Fall Time (Typ) :

93 ns

JESD-609 Code :

e1

Mount :

Chassis Mount, Screw

Number of Terminations :

25

Terminal Position :

UPPER

JESD-30 Code :

R-XUFM-X25

Configuration :

COMPLEX

Operating Temperature :

-40°C~150°C TJ

Max Power Dissipation :

390W

Additional Feature :

AVALANCHE RATED

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

7000pF @ 25V

Package / Case :

SP3

RoHS Status :

RoHS Compliant

Number of Pins :

3

Lead Free :

Lead Free