APTM50HM38FG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-609 Code :

e1

Gate to Source Voltage (Vgs) :

30V

Drain to Source Voltage (Vdss) :

500V

Operating Temperature :

-40°C~150°C TJ

Continuous Drain Current (ID) :

90A

Package / Case :

SP6

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

246nC @ 10V

DS Breakdown Voltage-Min :

500V

Max Power Dissipation :

694W

JESD-30 Code :

R-XUFM-X12

Number of Pins :

6

Power Dissipation :

694W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

36 Weeks

FET Type :

4 N-Channel (H-Bridge)

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Number of Terminations :

12

Mounting Type :

Chassis Mount

Input Capacitance (Ciss) (Max) @ Vds :

11200pF @ 25V

Mount :

Chassis Mount, Screw

Vgs(th) (Max) @ Id :

5V @ 5mA

Transistor Element Material :

SILICON

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Standard

Packaging :

Bulk

Terminal Position :

UPPER

Rds On (Max) @ Id, Vgs :

45m Ω @ 45A, 10V

ECCN Code :

EAR99

Case Connection :

Isolated

Rise Time :

35ns

Turn-Off Delay Time :

87 ns

RoHS Status :

RoHS Compliant

Turn On Delay Time :

18 ns

Number of Elements :

4

Terminal Finish :

TIN SILVER COPPER

Transistor Application :

SWITCHING

Terminal Form :

UNSPECIFIED

Pin Count :

12

Avalanche Energy Rating (Eas) :

2500 mJ

Fall Time (Typ) :

77 ns