APTM50H15FT1G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

12

Input Capacitance (Ciss) (Max) @ Vds :

5448pF @ 25V

Max Power Dissipation :

208W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

4 N-Channel (H-Bridge)

Fall Time (Typ) :

26 ns

Configuration :

COMPLEX

Transistor Application :

SWITCHING

Packaging :

Bulk

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

180m Ω @ 21A, 10V

Vgs(th) (Max) @ Id :

5V @ 1mA

Drain to Source Voltage (Vdss) :

500V

Case Connection :

Isolated

DS Breakdown Voltage-Min :

500V

Operating Temperature :

-40°C~150°C TJ

Terminal Form :

UNSPECIFIED

Mounting Type :

Chassis Mount

Factory Lead Time :

36 Weeks

Continuous Drain Current (ID) :

25A

Number of Pins :

1

Number of Elements :

4

Turn-Off Delay Time :

80 ns

Transistor Element Material :

SILICON

Terminal Position :

UPPER

ECCN Code :

EAR99

Turn On Delay Time :

29 ns

Rise Time :

35ns

Gate to Source Voltage (Vgs) :

30V

Radiation Hardening :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Chassis Mount, Screw

Power Dissipation :

208W

Additional Feature :

AVALANCHE RATED

Package / Case :

SP1

Published :

2007

Pin Count :

12

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Standard

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V