APTM50H14FT3G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Standard

Case Connection :

Isolated

Rds On (Max) @ Id, Vgs :

168m Ω @ 13A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SP3

Gate to Source Voltage (Vgs) :

30V

Number of Pins :

32

Turn-Off Delay Time :

50 ns

Mounting Type :

Chassis Mount

Fall Time (Typ) :

41 ns

Terminal Position :

UPPER

Pin Count :

25

ECCN Code :

EAR99

Terminal Form :

UNSPECIFIED

Transistor Application :

SWITCHING

Turn On Delay Time :

10 ns

Length :

73.4mm

Pbfree Code :

yes

Published :

2006

JESD-30 Code :

R-XUFM-X25

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

5V @ 1mA

Packaging :

Bulk

Operating Temperature :

-40°C~150°C TJ

Mount :

Chassis Mount, Screw

Additional Feature :

AVALANCHE RATED

JESD-609 Code :

e1

Radiation Hardening :

No

FET Type :

4 N-Channel (H-Bridge)

Rise Time :

17ns

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

Max Power Dissipation :

208W

Continuous Drain Current (ID) :

26A

Width :

40.8mm

Number of Elements :

4

Drain to Source Voltage (Vdss) :

500V

Terminal Finish :

TIN SILVER COPPER

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

3259pF @ 25V

Height :

11.5mm

Factory Lead Time :

16 Weeks

Power Dissipation :

208W

Element Configuration :

Single

DS Breakdown Voltage-Min :

500V

Number of Channels :

1

Transistor Element Material :

SILICON

Number of Terminations :

25