APTM50H14FT3G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

Transistor Element Material :

SILICON

Terminal Position :

UPPER

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

25

Packaging :

Bulk

Radiation Hardening :

No

Number of Elements :

4

JESD-609 Code :

e1

Number of Channels :

1

Length :

73.4mm

Rise Time :

17ns

Pin Count :

25

Transistor Application :

SWITCHING

Factory Lead Time :

16 Weeks

ECCN Code :

EAR99

Continuous Drain Current (ID) :

26A

Published :

2006

Additional Feature :

AVALANCHE RATED

Max Power Dissipation :

208W

Pbfree Code :

yes

Terminal Finish :

TIN SILVER COPPER

Operating Temperature :

-40°C~150°C TJ

Drain to Source Voltage (Vdss) :

500V

Turn On Delay Time :

10 ns

FET Type :

4 N-Channel (H-Bridge)

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

5V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

50 ns

Case Connection :

Isolated

Element Configuration :

Single

Terminal Form :

UNSPECIFIED

DS Breakdown Voltage-Min :

500V

Mount :

Chassis Mount, Screw

Power Dissipation :

208W

Mounting Type :

Chassis Mount

Width :

40.8mm

JESD-30 Code :

R-XUFM-X25

Rds On (Max) @ Id, Vgs :

168m Ω @ 13A, 10V

Package / Case :

SP3

Height :

11.5mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

30V

Number of Pins :

32

Fall Time (Typ) :

41 ns

Input Capacitance (Ciss) (Max) @ Vds :

3259pF @ 25V

FET Feature :

Standard