APTM50H10FT3G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Avalanche Energy Rating (Eas) :

1600 mJ

Input Capacitance (Ciss) (Max) @ Vds :

4367pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

SP3

Number of Terminations :

25

FET Type :

4 N-Channel (H-Bridge)

Turn On Delay Time :

15 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Case Connection :

Isolated

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

312W

FET Feature :

Standard

Rds On (Max) @ Id, Vgs :

120m Ω @ 18.5A, 10V

DS Breakdown Voltage-Min :

500V

Rise Time :

21ns

Configuration :

COMPLEX

Transistor Application :

SWITCHING

Operating Temperature :

-40°C~150°C TJ

Packaging :

Bulk

Number of Elements :

4

Mount :

Chassis Mount, Screw

Number of Pins :

3

Pbfree Code :

yes

Terminal Finish :

TIN SILVER COPPER

Continuous Drain Current (ID) :

37A

Power Dissipation :

312W

Mounting Type :

Chassis Mount

Factory Lead Time :

36 Weeks

Terminal Position :

UPPER

JESD-609 Code :

e1

Vgs(th) (Max) @ Id :

5V @ 1mA

Published :

2006

Drain-source On Resistance-Max :

0.12Ohm

Turn-Off Delay Time :

73 ns

Terminal Form :

UNSPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

96nC @ 10V

Pin Count :

25

Fall Time (Typ) :

52 ns

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

30V

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

500V

Additional Feature :

AVALANCHE RATED

JESD-30 Code :

R-XUFM-X25

ECCN Code :

EAR99