APTM50H10FT3G
- Mfr.Part #
- APTM50H10FT3G
- Manufacturer
- Microchip Technology
- Package / Case
- SP3
- Datasheet
- Download
- Description
- MOSFET 4N-CH 500V 37A SP3
- Stock
- 23,574
- In Stock :
- 23,574
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Additional Feature :
- AVALANCHE RATED
- ECCN Code :
- EAR99
- Terminal Finish :
- TIN SILVER COPPER
- Turn On Delay Time :
- 15 ns
- Mount :
- Chassis Mount, Screw
- Terminal Position :
- UPPER
- Configuration :
- COMPLEX
- DS Breakdown Voltage-Min :
- 500V
- Number of Pins :
- 3
- Rise Time :
- 21ns
- JESD-609 Code :
- e1
- Pin Count :
- 25
- Package / Case :
- SP3
- Drain-source On Resistance-Max :
- 0.12Ohm
- Packaging :
- Bulk
- JESD-30 Code :
- R-XUFM-X25
- FET Type :
- 4 N-Channel (H-Bridge)
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2006
- Turn-Off Delay Time :
- 73 ns
- Max Power Dissipation :
- 312W
- Gate Charge (Qg) (Max) @ Vgs :
- 96nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- RoHS Compliant
- Case Connection :
- Isolated
- Drain to Source Voltage (Vdss) :
- 500V
- Avalanche Energy Rating (Eas) :
- 1600 mJ
- FET Feature :
- Standard
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 36 Weeks
- Number of Terminations :
- 25
- Input Capacitance (Ciss) (Max) @ Vds :
- 4367pF @ 25V
- Gate to Source Voltage (Vgs) :
- 30V
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 18.5A, 10V
- Number of Elements :
- 4
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 52 ns
- Terminal Form :
- UNSPECIFIED
- Mounting Type :
- Chassis Mount
- Continuous Drain Current (ID) :
- 37A
- Operating Temperature :
- -40°C~150°C TJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation :
- 312W
- Datasheets
- APTM50H10FT3G
APTM50H10FT3G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Microsemi Corporation stock available at
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