APTM50H10FT3G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

312W

JESD-609 Code :

e1

Pbfree Code :

yes

Terminal Position :

UPPER

Operating Temperature :

-40°C~150°C TJ

JESD-30 Code :

R-XUFM-X25

Mount :

Chassis Mount, Screw

Continuous Drain Current (ID) :

37A

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

4367pF @ 25V

Power Dissipation :

312W

Pin Count :

25

ECCN Code :

EAR99

Factory Lead Time :

36 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

96nC @ 10V

Number of Elements :

4

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

TIN SILVER COPPER

Transistor Application :

SWITCHING

Mounting Type :

Chassis Mount

Case Connection :

Isolated

Turn-Off Delay Time :

73 ns

Rise Time :

21ns

Avalanche Energy Rating (Eas) :

1600 mJ

Package / Case :

SP3

Published :

2006

Configuration :

COMPLEX

Terminal Form :

UNSPECIFIED

Turn On Delay Time :

15 ns

Rds On (Max) @ Id, Vgs :

120m Ω @ 18.5A, 10V

Fall Time (Typ) :

52 ns

FET Type :

4 N-Channel (H-Bridge)

Packaging :

Bulk

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

500V

Drain-source On Resistance-Max :

0.12Ohm

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

25

FET Feature :

Standard

Additional Feature :

AVALANCHE RATED

Drain to Source Voltage (Vdss) :

500V

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

5V @ 1mA

Gate to Source Voltage (Vgs) :

30V