APTM50DUM38TG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Position :

UPPER

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

500V

Gate to Source Voltage (Vgs) :

30V

Additional Feature :

AVALANCHE RATED

Max Power Dissipation :

694W

Published :

2016

Transistor Element Material :

SILICON

Terminal Finish :

TIN SILVER COPPER

Rds On (Max) @ Id, Vgs :

45m Ω @ 45A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 5mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

Unknown

Continuous Drain Current (ID) :

90A

Gate Charge (Qg) (Max) @ Vgs :

246nC @ 10V

FET Feature :

Standard

Number of Pins :

4

Transistor Application :

SWITCHING

Operating Temperature :

-40°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

360A

Power Dissipation :

694W

FET Type :

2 N-Channel (Dual)

RoHS Status :

RoHS Compliant

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

SP4

Terminal Form :

UNSPECIFIED

Packaging :

Bulk

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e1

Number of Terminations :

12

Input Capacitance (Ciss) (Max) @ Vds :

11200pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

12

Mounting Type :

Chassis Mount

Case Connection :

Isolated

DS Breakdown Voltage-Min :

500V

Mount :

Chassis Mount, Screw